| PART |
Description |
Maker |
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB
DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| HYS72T512341HKP HYS72T512341HJP HYS72T512341HHP HY |
240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, DMA240
240-Pin Registered DDR2 SDRAM Modules 240针DDR2 SDRAM的注册模
|
Qimonda AG
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册，瓦特/锁相环，葡萄多糖
|
Optrex America, Inc.
3M Company
|
| EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68
2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MT47H128M8 MT47H128M8CF-187EAT MT47H128M8CF-187EIT |
DDR2 SDRAM
|
Micron Technology
|
| AS4DDR232M72PBG AS4DDR232M72PBG-3_ET AS4DDR232M72P |
32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HY5PS561621F-Y5 HY5PS56421F-Y5 HY5PS56821F-Y5 HY5P |
DDR2 SDRAM - 256Mb
|
Hynix Semiconductor
|
| EDE1108AJBG |
1G bits DDR2 SDRAM
|
Elpida Memory
|
